Product Details
40% efficiency concentrating triple junction cell;
GalnP₂/InGaAs/Ge structure, stable performance;
Multi-layer anti-reflection coating, low reflectivity at 300-1800nm;
Package gain (anti-reflection film optimized for secondary mirrors);
Can work stably under 500 to 1000 times sunlight;
Optimized gate electrode to improve output efficiency;
Can be welded on both sides;
Battery size can be designed according to customer requirements;
Can work normally in harsh climates;
Output: 3MW/month.
Battery Specifications
| Battery Materials | GalnP₂/InGaAs/Ge |
| Anti-reflective coating | TiOx/Al₂O₃ |
| Chip size | 11 * 10.2mm² ± 0.01mm² |
| Effective area | 100 mm² |
| Chip thickness | 175 ± 20μm |
| Battery polarity | N-P |
| Front electrode | ~6 μm |
| Back electrode | ~4 μm |
Typical Ⅰ-Ⅴ curve under 500 times concentrating condition
Optoelectronic Properties
| Concentration multiple | Isc(A) | Voc(V) | Imp(A) | Vmp(V) | FF | Eff. |
| X 500 | 7.563 | 3.121 | 7.289 | 2.823 | 87.18% | 41.15% |
| X 1000 | 15.015 | 3.235 | 14.502 | 2.782 | 83.06% | 40.34% |
Measurement conditions: AM1.5G,T= 25℃,50W/cm²(x500),100W/cm²(X1000)
Concentrated solar cells use convex lenses or parabolic mirrors to focus sunlight to several, dozens, hundreds or even thousands of times, and then project it onto the solar cell. At this time, the solar cell may produce a corresponding multiple of electrical power. They have the advantages of high conversion rate, small battery footprint and low consumables. The representative high-power concentrator battery is the triple-junction gallium arsenide battery.
High photoelectric conversion efficiency: high theoretical conversion efficiency.
Broad spectrum absorption: Full spectrum absorbs 95% of sunlight energy and generates electricity even in weak light.
Temperature resistance: It can still work normally at 390℃ and is not sensitive to high temperatures.
Low-energy manufacturing process: one-fifth that of crystalline silicon photovoltaic cells.
Gallium Arsenide:(Chemical formula: GaAs) is a compound synthesized from two elements: gallium and arsenic. It is also an important IIIA and VA compound semiconductor material.
Concentrated solar photovoltaic cells are [Concentrator Photovoltaic] + [Highly concentrating mirror Fresnel Lens] + [Sun Tracker (Sun Tracker)], its solar energy conversion efficiency can reach 31% to 40.7%. Although the conversion efficiency is high, it is used in the space industry due to the long sun exposure time. Now it can be used in the power generation industry with solar trackers. The main material of concentrated solar photovoltaic cells is concentrated gallium arsenide (GaAs), which is a III-V material, that is, a triple-junction gallium arsenide cell, which concentrates light. Different from silicon wafer solar technology, multi-junction compound semiconductors can absorb energy from a wider solar spectrum, and can absorb energy from 400 to 1,200nm wavelengths in the solar spectrum. Currently, three-junction InGaP/GaAs/Ge concentrator solar cells have been developed, which can greatly improve the conversion efficiency, and the heat resistance of concentrator solar cells is higher than that of ordinary wafer solar cells.
Energy conversion rate comparison:
Thin film solar power (7%~12%), wafer solar power (12%~20%), traditional nuclear power plant (30%), thermal power generation (36.8%), concentrated solar energy (31%~40.7%), new nuclear power plant (42~57%)