4cm*8cm satellite-grade high-efficiency triple-junction gallium arsenide cell

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4cm*8cm satellite-grade high-efficiency triple-junction gallium arsenide cell

Product Details

Satellite solar panel gallium arsenide cells are based on aerospace power products. Its conversion efficiency is 30-35%, the component thickness is less than 1 mm, and it has good high energy density and special environmental resistance.

Electrical performance under standard test conditions: (AM1.5, 1000W/m2, 25℃)

 

Product Features

The triple-junction gallium arsenide solar cell uses germanium as the substrate and consists of three N/P structure sub-cells connected in series through tunnel junctions. It has high efficiency and strong radiation resistance.

 

Application areas

Low-orbit aircraft, medium-orbit aircraft, high-orbit aircraft (nano-satellites, small satellites, commercial satellites, large satellites, drones, etc.)

 

Basic Data

GaAs battery material: triple junction gallium arsenide (GaInP2/GaAs/GeGe substrate

GaAs cell dimensions:(80.15±0.05)mm *(40.15±0.05)mm

GaAs battery area: 30.15c㎡

GaAs cell thickness:0.36±0.02mm

GaAs cell weight:(125±12)mg/c㎡

Anti-reflection coating: TiOx/Al2O3

Cover glass: KFB120

Coverglass thickness:120±20 μm

Interconnect material: silver/Kovar silver plating

Interconnect thickness:20/25μm

 

Electrical performance data (AM0, 1SUN, 1353w/㎡, 25℃)

Average open circuit voltage Voc (mV): 2740

Average short circuit current density Joc (mA/c㎡): 17.4

Maximum power voltage Vm (mV): 2430

Maximum power current density Joc (mA/c㎡): 16.7

Average conversion efficiencyηbare:30%

Fill factor: 0.850

 

Irradiation intensity: (AM0, 1SUN, 1353w/㎡, 25℃)

Irradiation intensity 1*1014e/cm2 5*1014e/cm2 1*1015e/cm2

Im/Imo 0.99 0.97 0.94

Vm/Vmo 0.96 0.93 0.92

Pm/Pmo 0.95 0.90 0.86

 

Design Parameters

Voltage Vl (mV) 2350; Average current Ll ave (mA) 500; Minimum current Ll min (mA) 480

 

Diode Protection

Vforward(620mA) ≤1.0V ; Ireverse(4.0V) ≤50μA

 

Other parameters

Absorption coefficient ≤0.92; tensile strength ≥0.83N/mm2

 

Temperature coefficient

Irradiation intensity BOL 1MeV, 5*1014e/cm2 1MeV, 1*1015e/cm2

Jsc(μA/cm2/C) 11.0 10.0 13.0

Voc(mV/ C) -5.9 -6.1 -6.3

Jm(μA/cm2/C) 9.0 9.5 15.0

Vm(mV/ C) -6.0 -6.2 -6.5

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