Product Details
The development of gallium arsenide solar cells began in the 1950s and has a history of more than 50 years. Since the 1980s, gallium arsenide solar cell technology has experienced several development stages from LPE to MOCVD, from homoepitaxial to heteroepitaxial, and from single junction to multi-junction stacked structures. Its development speed is accelerating and its efficiency is constantly improving. At present, the maximum efficiency of the laboratory has reached 50%, and China's industrial production conversion rate can reach more than 30%.
6U satellite board product features:
Selecting triple-junction gallium arsenide solar cells
Using aerospace product manufacturing technology
High reliability
Optional accessories:Solar sensor, temperature sensor, magnetic torque sensor, MEMS gyroscope
Typical product performance parameters of 6U satellite board
| Product model | 1U top/bottom & side panels | 2U side panel | 3U side panel | 6U side panel |
| Substrate material | FR4/Kapton aluminum | |||
| Power (W) | 2.35 | 4.71 | 8.25 | 16.5 |
| Battery Materials | Triple Junction Gallium Arsenide (GaAs) | |||
| Weight (g) | 40 | 80 | 120 | 240 |
| Link method | 2S1P | 2S2P | 7S1P | 7S2P |
| Dimensions mm | Top/bottom plate: 98*98 side panel 83*98 | 83*211.5 | 83*338 | 182.6*338 |
| Life a | 2a | |||
| Working temperature ℃ | -55~+125 | |||
| Single chip efficiency | 30% | |||
| Hypersensitivity and temperature sensor | optional | |||
| Board thickness mm | 1.8 | |||
| cover thickness mm | 0.12 | |||