Lightweight flexible battery solution based on InGaP / GaAs / Ge triple junction gallium arsenide technology system.
Using the mature InGaP/GaAs/Ge triple-junction gallium arsenide technology system, while retaining the high reliability and high efficiency advantages of the traditional space-level triple-junction structure, it significantly reduces weight and improves flexibility through Ge (germanium) substrate thinning technology, achieving a balance between lightweight, high specific power and bendable characteristics.
Compared with traditional rigid space solar cells, thinning Ge substrates can reduce device quality and enhance flexibility, adapting to the application requirements of lightweight, high integration and special structures.
Flexible substrate, epitaxial multi-junction gallium arsenide (III-V) solar cell structure;
Single battery size: 2cm×4cm;
Single efficiency >30%, combined efficiency >28%;
Areal Density < 600g/m2, specific power > 500W/kg;
Strong environmental adaptability, temperature coefficient -0.07%/℃, strong radiation resistance;
Application areas: High-efficiency solar aircraft;
Product Specifications
Product Usage
| Military | Civilian |
| 1. Network reconnaissance and early warning | 1. Photography, aerial photography of locations or scenery |
| 2. Individual special operations | 2. Networked highway monitoring |
| 3. Military strike | 3. Geological exploration |
