Product Details
Gallium arsenide (GaAs) is a III-V compound semiconductor material. Its energy gap matches the solar spectrum well and it can withstand high temperatures. Compared with silicon solar cells, gallium arsenide solar cells have better performance.
The bandgap of gallium arsenide solar cells is wider than that of silicon, making its spectral responsiveness and space solar spectrum matching capabilities better than silicon. At present, the theoretical efficiency of silicon cells is about 23%, while the theoretical efficiency of single-junction gallium arsenide solar cells reaches 27%, and the theoretical efficiency of multi-junction gallium arsenide solar cells exceeds 50%. China's current mass production level can reach more than 30%.
1U satellite board product features:
Selecting triple-junction gallium arsenide solar cells
Using aerospace product manufacturing technology
High reliability
Optional accessories:Solar sensor, temperature sensor, magnetic torque sensor, MEMS gyroscope
Typical product performance parameters of 1U satellite board
| Product model | 1U top/bottom & side panels | 2U side panel | 3U side panel | 6U side panel |
| Substrate material | FR4/Kapton aluminum | |||
| Power (W) | 2.35 | 4.71 | 8.25 | 16.5 |
| Battery Materials | Triple Junction Gallium Arsenide (GaAs) | |||
| Weight (g) | 40 | 80 | 120 | 240 |
| Link method | 2S1P | 2S2P | 7S1P | 7S2P |
| Dimensions mm | Top/bottom plate: 98*98 side panel 83*98 | 83*211.5 | 83*338 | 182.6*338 |
| Life a | 2a | |||
| Working temperature ℃ | -55~+125 | |||
| Single chip efficiency | 30% | |||
| Hypersensitivity and temperature sensor | optional | |||
| Board thickness mm | 1.8 | |||
| cover thickness mm | 0.12 | |||