Silicon carbide conversion chips / Beta-energy transducers
Semiconductor devices for direct beta-to-electric conversion, with source-specific matching and custom structure enquiries.
| Reference die size | 10 × 10 mm |
|---|---|
| Reference active area | 7.6 × 7.6 mm |
| Reference thickness | 350 µm |
| Custom design directions | 100–200 µm thin structures and non-standard outlines |
| Source-specific design | H-3, Ni-63 and C-14 energy conditions; validate each selected configuration |
Isotope and emitted spectrum, activity or incident power, irradiated area, dimensions, packaging and load.
| Electron beam · 17 kV / 1 nA | Pmax 3.08 µW; efficiency 18.1% |
|---|---|
| Electron beam · 30 kV / 1 nA | Pmax 7.40 µW; efficiency 24.7% |
| Ni-63 source test | Pmax density 18 nW/cm²; approx. 7% referenced to 257 nW/cm² of surface-emitted power |
Electron-beam results are not complete C-14 battery efficiencies. Values come from supporting technical documentation, not independent FULLSUNS measurements.
Reference values apply to their test conditions. Final specifications, configuration and delivery scope are confirmed per project.
Photovoltaic cells for scintillator or phosphor coupling and micropower conversion research.
View product →
C-14 micropower and energy-management configurations assessed against low-average-power loads and installation requirements.
View product →